Invention Grant
- Patent Title: On-die terminators formed of coarse and fine resistors
- Patent Title (中): 由粗细和电阻器形成的裸片终端
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Application No.: US11950419Application Date: 2007-12-04
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Publication No.: US07973552B2Publication Date: 2011-07-05
- Inventor: Chung-Hui Chen
- Applicant: Chung-Hui Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/003

Abstract:
An integrated circuit includes a semiconductor substrate; a first node; a second node; and a first plurality of resistors, each in a first plurality of resistor units. Each of the first plurality of resistor units includes a first end connected to the first node, and a second end connected to the second node. The integrated circuit further includes a second plurality of resistors, each in a second plurality of resistor units. Each of the second plurality of resistor units includes a first end connected to the first node, and a second end connected to the second node. The first plurality of resistors is formed of a first material. The second plurality of resistors is formed of a second material different from the first material. The integrated circuit further includes a switch in one of the first and the second plurality of resistor units and serially connected to a resistor.
Public/Granted literature
- US20090140765A1 On-Die Terminators Formed of Coarse and Fine Resistors Public/Granted day:2009-06-04
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