Invention Grant
- Patent Title: ESD protection bipolar device with internal avalanche diode
- Patent Title (中): 具有内部雪崩二极管的ESD保护双极型器件
-
Application No.: US11652982Application Date: 2007-01-12
-
Publication No.: US07973386B1Publication Date: 2011-07-05
- Inventor: Vladislav Vashchenko , Vladimir Kuznetsov , Peter J. Hopper
- Applicant: Vladislav Vashchenko , Vladimir Kuznetsov , Peter J. Hopper
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Jurgen K. Vollrath
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
In a bipolar device an intrinsic Zener like diode is formed for controlling the triggering voltage and leakage current, the Zener-like diode being formed between the n-collector and the p-base, wherein the collector implant and base diffusion overlap at least partially.
Information query
IPC分类:
