Invention Grant
- Patent Title: Semiconductor device with a charge carrier compensation structure and process
- Patent Title (中): 具有载流子补偿结构和工艺的半导体器件
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Application No.: US12194384Application Date: 2008-08-19
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Publication No.: US07973359B2Publication Date: 2011-07-05
- Inventor: Franz Hirler , Armin Willmeroth , Anton Mauder , Gerald Deboy , Holger Kapels , Carolin Tolksdorf , Frank Pfirsch
- Applicant: Franz Hirler , Armin Willmeroth , Anton Mauder , Gerald Deboy , Holger Kapels , Carolin Tolksdorf , Frank Pfirsch
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device with a charge carrier compensation structure. In one embodiment, the semiconductor device has a central cell field with a gate and source structure. At least one bond contact area is electrically coupled to the gate structure or the source structure. A capacitance-increasing field plate is electrically coupled to at least one of the near-surface bond contact areas.
Public/Granted literature
- US20100044788A1 SEMICONDUCTOR DEVICE WITH A CHARGE CARRIER COMPENSATION STRUCTURE AND PROCESS Public/Granted day:2010-02-25
Information query
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