Invention Grant
US07973351B2 Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same
有权
具有Heusler合金，磁阻元件和使用该堆叠的自旋晶体管的堆叠及其制造方法
- Patent Title: Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same
- Patent Title (中): 具有Heusler合金，磁阻元件和使用该堆叠的自旋晶体管的堆叠及其制造方法
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Application No.: US12565303Application Date: 2009-09-23
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Publication No.: US07973351B2Publication Date: 2011-07-05
- Inventor: Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Hideyuki Sugiyama , Yoshiaki Saito
- Applicant: Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Hideyuki Sugiyama , Yoshiaki Saito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-246718 20080925
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A stack includes a crystalline MgO layer, crystalline Heusler alloy layer, and amorphous Heusler alloy layer. The crystalline Heusler alloy layer is provided on the MgO layer. The amorphous Heusler alloy layer is provided on the crystalline Heusler alloy layer.
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