Invention Grant
US07973345B2 Method of cleaning a patterning device, method of depositing a layer system on a substrate, system for cleaning a patterning device, and coating system for depositing a layer system on a substrate
有权
清洁图案形成装置的方法，在基板上沉积层系统的方法，用于清洁图案形成装置的系统和用于在衬底上沉积层系统的涂覆系统
- Patent Title: Method of cleaning a patterning device, method of depositing a layer system on a substrate, system for cleaning a patterning device, and coating system for depositing a layer system on a substrate
- Patent Title (中): 清洁图案形成装置的方法，在基板上沉积层系统的方法，用于清洁图案形成装置的系统和用于在衬底上沉积层系统的涂覆系统
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Application No.: US12109067Application Date: 2008-04-24
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Publication No.: US07973345B2Publication Date: 2011-07-05
- Inventor: Uwe Hoffmann , Jose Manuel Dieguez-Campo
- Applicant: Uwe Hoffmann , Jose Manuel Dieguez-Campo
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: EP07109357 20070531
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A method of cleaning a patterning device, the patterning device having at least organic coating material (OLED material) deposited thereon, where the method includes the step of providing a cleaning plasma for removing the coating material from the patterning device by means of a plasma etching process. During the step of removing the coating material from the patterning device, the temperature of the patterning device does not exceed a critical temperature causing damage to the patterning device, while maintaining a plasma etching rate of at least 0.2 μm/min. In order to generate a pulsed cleaning plasma, pulsed energy is provided. The method can be carried out in a direct plasma etching process or in a remote plasma etching process. Different etching processes may be combined or carried out subsequently.
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