The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide a first site for the growth of a plurality of first epitaxial crystals of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide a third site for the growth of a third epitaxial crystal of the semiconductor material toward the first preferred orientation.