Invention Grant
- Patent Title: Low power phase change memory cell with large read signal
- Patent Title (中): 具有较大读取信号的低功率相变存储单元
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Application No.: US11133491Application Date: 2005-05-20
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Publication No.: US07973301B2Publication Date: 2011-07-05
- Inventor: Thomas Happ , Shoaib Hasan Zaidi , Jan Boris Philipp
- Applicant: Thomas Happ , Shoaib Hasan Zaidi , Jan Boris Philipp
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L29/02 ; H01L29/04 ; H01L29/06
Abstract:
A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.
Public/Granted literature
- US20060261321A1 Low power phase change memory cell with large read signal Public/Granted day:2006-11-23
Information query
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