Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12385982Application Date: 2009-04-27
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Publication No.: US07972958B2Publication Date: 2011-07-05
- Inventor: Jung-hoon Lee , Hong-jae Shin , Seo-woo Nam , Sae-il Son , Sang-doo Kim , Jung-deog Lee , Sang-wook Kwon
- Applicant: Jung-hoon Lee , Hong-jae Shin , Seo-woo Nam , Sae-il Son , Sang-doo Kim , Jung-deog Lee , Sang-wook Kwon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0042452 20080507
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Provided is a method of fabricating a semiconductor device including a dual silicide process. The method may include sequentially siliciding and stressing a first MOS region, and sequentially siliciding and stressing a second MOS region after siliciding and stressing the first MOS region, the second MOS region being a different type than the first MOS region.
Public/Granted literature
- US20090280645A1 Method of fabricating semiconductor device Public/Granted day:2009-11-12
Information query
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