Invention Grant
- Patent Title: Flash memory device and fabrication method thereof
- Patent Title (中): 闪存器件及其制造方法
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Application No.: US12731594Application Date: 2010-03-25
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Publication No.: US07972925B2Publication Date: 2011-07-05
- Inventor: Yoo Nam Jeon , Ki Seog Kim
- Applicant: Yoo Nam Jeon , Ki Seog Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2007-0091520 20070910
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention relates to a flash memory device and a fabrication method thereof. A trench may be formed within a junction region between word lines by etching a semiconductor substrate between not only a word line and a select line, but also between adjacent word lines. Accordingly, the occurrence of a program disturbance phenomenon can be prevented as the injection of hot carriers into a program-inhibited cell is minimized in a program operation.
Public/Granted literature
- US20100178745A1 Flash Memory Device and Fabrication Method Thereof Public/Granted day:2010-07-15
Information query
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