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US07972876B2 Zinc-oxide-based semiconductor light-emitting device and method of fabricating the same 失效
基于氧化锌的半导体发光器件及其制造方法

  • Patent Title: Zinc-oxide-based semiconductor light-emitting device and method of fabricating the same
  • Patent Title (中): 基于氧化锌的半导体发光器件及其制造方法
  • Application No.: US12039365
    Application Date: 2008-02-28
  • Publication No.: US07972876B2
    Publication Date: 2011-07-05
  • Inventor: Hsing Chao Chen , Miin Jang Chen
  • Applicant: Hsing Chao Chen , Miin Jang Chen
  • Applicant Address: TW Taipei
  • Assignee: Miin-Jang Chen
  • Current Assignee: Miin-Jang Chen
  • Current Assignee Address: TW Taipei
  • Priority: TW96107204A 20070302; TW97104466A 20080205
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Zinc-oxide-based semiconductor light-emitting device and method of fabricating the same
Abstract:
The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof. The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region.
Abstract(Chinese):

本发明公开了一种氧化锌系半导体发光元件及其制造方法。 首先，根据本发明的方法是制备基材。 接下来，通过原子层沉积法，在ZnO基多层结构包括发光区域的基板上或上方形成ZnO基多层结构。

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