Doped organic semiconductor material

Invention Grant

US07972541B2 Doped organic semiconductor material 有权

Title translation: 掺杂有机半导体材料

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Patent Title: Doped organic semiconductor material
Patent Title (中): 掺杂有机半导体材料
Application No.: US12093167

Application Date: 2006-11-10
Publication No.: US07972541B2

Publication Date: 2011-07-05
Inventor: Ansgar Werner , Andrea Lux , Josef Salbeck
Applicant: Ansgar Werner , Andrea Lux , Josef Salbeck
Applicant Address: DE Dresden
Assignee: Novaled AG
Current Assignee: Novaled AG
Current Assignee Address: DE Dresden
Agency: Sutherland, Asbill & Brennan, LLP
Priority: EP05024515 20051110
International Application: PCT/EP2006/010816 WO 20061110
International Announcement: WO2007/054345 WO 20070518
Main IPC: H01L29/08
IPC: H01L29/08 ; H01L33/00 ; H01B1/12 ; B32B9/06

Abstract:

The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material.

Abstract(Chinese):

掺杂有机半导体材料本发明涉及一种掺杂的有机半导体材料，其包含至少一种掺有至少一种掺杂剂的有机基质材料，所述基质材料选自某些菲咯啉衍生物; 以及包含这种半导体材料的有机发光二极管。

Public/Granted literature

US20090001327A1 Doped Organic Semiconductor Material Public/Granted day:2009-01-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的
H01L29/08	...具有连接到1个通有待整流、放大或切换的电流的电极上去的半导体区域的；并且这样的电极又是包含3个或更多个电极的半导体器件的组成部分的