Invention Grant
- Patent Title: Light emitting diode device
- Patent Title (中): 发光二极管装置
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Application No.: US12327572Application Date: 2008-12-03
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Publication No.: US07972025B2Publication Date: 2011-07-05
- Inventor: Ga-Lane Chen
- Applicant: Ga-Lane Chen
- Applicant Address: TW Tu-Cheng, New Taipei
- Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: TW Tu-Cheng, New Taipei
- Agent Clifford O. Chi
- Priority: CN200810301150 20080416
- Main IPC: F21L4/00
- IPC: F21L4/00
Abstract:
A light emitting diode device includes a light emitting diode illumination element, a solar cell unit generating power for the illumination element and a rechargeable cell unit storing the power.
Public/Granted literature
- US20090262523A1 LIGHT EMITTING DIODE DEVICE Public/Granted day:2009-10-22
Information query
