Invention Grant
- Patent Title: Semiconductor device and control method of the same
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Application No.: US12574413Application Date: 2009-10-06
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Publication No.: US07957205B2Publication Date: 2011-06-07
- Inventor: Hiroaki Wada , Kazuhiro Kurihara
- Applicant: Hiroaki Wada , Kazuhiro Kurihara
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
The present invention is a semiconductor device including: a resistor R11 (first resistor part) and an FET 15 (second resistor part) connected in series between a power supply Vcc (first power supply) and ground (second power supply); an output node N11 provided between the resistor R11 and FET 15 and used for outputting a reference voltage; a feedback node N12 provided between the power supply Vcc and the ground; and a voltage control circuit (19) that maintains a voltage of the feedback node N12 at a constant level by using the reference voltage of the output node N11 and the voltage of the feedback node N12. The present invention can provide a semiconductor device having a reference voltage generating circuit capable of generating the reference voltage that does not greatly depend on a power supply voltage and its control method.
Public/Granted literature
- US20100020214A1 SEMICONDUCTOR DEVICE AND CONTROL METHOD OF THE SAME Public/Granted day:2010-01-28
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