Invention Grant
US07957197B2 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
有权
具有电流检测放大器的非易失性存储器具有预充电电路和耦合到感测节点的传输栅极
- Patent Title: Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
- Patent Title (中): 具有电流检测放大器的非易失性存储器具有预充电电路和耦合到感测节点的传输栅极
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Application No.: US12128535Application Date: 2008-05-28
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Publication No.: US07957197B2Publication Date: 2011-06-07
- Inventor: Hao Thai Nguyen , Man Lung Mui , Seungpil Lee , Fanglin Zhang , Chi-Ming Wang
- Applicant: Hao Thai Nguyen , Man Lung Mui , Seungpil Lee , Fanglin Zhang , Chi-Ming Wang
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Davis Wright Tremaine LLP
- Main IPC: G11C16/26
- IPC: G11C16/26

Abstract:
Sensing circuits for sensing a conduction current of a memory cell among a group of non-volatile memory cells being sensed in parallel and providing the result of the sensing to a data bus are presented. A precharge circuit is coupled to a node for charging the node to an initial voltage. An intermediate circuit is also coupled to the node and connectable to the memory cell, by which current from the precharge circuit can be supplied to the memory cell. The circuit also includes a comparator circuit to perform a determination of the conduction current by a rate of discharge at the node; a data latch coupled to the comparator circuit to hold the result of this determination; and a transfer gate coupled to the data latch to supply a latched result to the data bus independently of the node. This arrangement improves sensing performance and can help to eliminate noise on the analog sensing path during sensing and reduce switching current.
Public/Granted literature
- US20090296488A1 High Speed Sense Amplifier Array and Method for Nonvolatile Memory Public/Granted day:2009-12-03
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