Invention Grant
- Patent Title: Drift compensation in a flash memory
- Patent Title (中): 闪存中的漂移补偿
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Application No.: US11591641Application Date: 2006-11-02
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Publication No.: US07957189B2Publication Date: 2011-06-07
- Inventor: Meir Avraham , Amir Ronen
- Applicant: Meir Avraham , Amir Ronen
- Applicant Address: IL Kfar Saba
- Assignee: SanDisk IL Ltd.
- Current Assignee: SanDisk IL Ltd.
- Current Assignee Address: IL Kfar Saba
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
A plurality of memory cells are managed by obtaining values of one or more environmental parameters of the cells and adjusting values of one or more reference voltages of the cells accordingly. Alternatively, a statistic of at least some of the cells, relative to a single reference parameter that corresponds to a control parameter of the cells, is measured, and the value of the reference voltage is adjusted accordingly. Examples of environmental parameters include program-erase cycle count, data retention time and temperature. Examples of reference voltages include read reference voltages and program verify reference voltages. Examples of statistics include the fraction of cells whose threshold voltages exceed initial lower bounds or initial medians.
Public/Granted literature
- US20070070696A1 Drift compensation in a flash memory Public/Granted day:2007-03-29
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