Invention Grant
US07957186B2 Non-volatile memory system and data read method of non-volatile memory system
失效
非易失性存储器系统和非易失性存储器系统的数据读取方法
- Patent Title: Non-volatile memory system and data read method of non-volatile memory system
- Patent Title (中): 非易失性存储器系统和非易失性存储器系统的数据读取方法
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Application No.: US12018300Application Date: 2008-01-23
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Publication No.: US07957186B2Publication Date: 2011-06-07
- Inventor: Dong-ku Kang
- Applicant: Dong-ku Kang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2007-0007247 20070123
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
In one aspect, a non-volatile memory system includes a plurality of memory cell arrays having different read stand-by times. For example, the non-volatile memory system may include a single-level cell (SLC) array composed of a plurality of SLCs, and a multi-level cell (MLC) array composed of a plurality of MLCs. In this case, the SLC array and the MLC array receive a read instruction at the same time and prepare to read data at the same time. However, the SLC array begins to read the data prior to the MLC array, and the MLC array begins to read the data once the SLC array has completely read the data.
Public/Granted literature
- US20080175058A1 NON-VOLATILE MEMORY SYSTEM AND DATA READ METHOD OF NON-VOLATILE MEMORY SYSTEM Public/Granted day:2008-07-24
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