Invention Grant
- Patent Title: Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
- Patent Title (中): 具有非磁性丝接触的存储单元及其操作和制造方法
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Application No.: US12352364Application Date: 2009-01-12
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Publication No.: US07957182B2Publication Date: 2011-06-07
- Inventor: Jun Liu , Gurtej Sandhu
- Applicant: Jun Liu , Gurtej Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: G11C11/14
- IPC: G11C11/14 ; G11C7/00 ; G11C29/82

Abstract:
A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
Public/Granted literature
- US20100177561A1 MEMORY CELL HAVING NONMAGNETIC FILAMENT CONTACT AND METHODS OF OPERATING AND FABRICATING THE SAME Public/Granted day:2010-07-15
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