Invention Grant
- Patent Title: Semiconductor memory
- Patent Title (中): 半导体存储器
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Application No.: US12894256Application Date: 2010-09-30
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Publication No.: US07957174B2Publication Date: 2011-06-07
- Inventor: Yoshiko Kato , Mitsuhiro Noguchi
- Applicant: Yoshiko Kato , Mitsuhiro Noguchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-174280 20070702
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
A semiconductor memory includes a memory cell array area having a memory cell, a word line contact area adjacent to the memory cell array area, a word line arranged straddling the memory cell array area and the word line contact area, a contact hole provided on the word line in the word line contact area, and a word line driver connected to the word line via the contact hole. A size of the contact hole is larger than a width of the word line, and the lowest parts of the contact hole exist on a position lower than a top surface of the word line and higher than a bottom surface of the word line.
Public/Granted literature
- US20110019469A1 SEMICONDUCTOR MEMORY Public/Granted day:2011-01-27
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