Invention Grant
- Patent Title: Multi-zone electrostatic chuck and chucking method
- Patent Title (中): 多区静电吸盘和夹紧方式
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Application No.: US12433680Application Date: 2009-04-30
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Publication No.: US07957118B2Publication Date: 2011-06-07
- Inventor: Yi-Pin Chang , Tung Long Lai , Soon Kang Huang
- Applicant: Yi-Pin Chang , Tung Long Lai , Soon Kang Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01T23/00
Abstract:
A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.
Public/Granted literature
- US20100277850A1 Multi-Zone Electrostatic Chuck and Chucking Method Public/Granted day:2010-11-04
Information query
IPC分类:
