Invention Grant
- Patent Title: Magnetoresistive element having spacer layer that includes two layered regions composed of oxide semiconductor and nonmagnetic conductor phase sandwiched therebetween
- Patent Title (中): 具有间隔层的磁阻元件包括由氧化物半导体和夹在其间的非磁性导体相组成的两个层状区域
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Application No.: US11889012Application Date: 2007-08-08
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Publication No.: US07957108B2Publication Date: 2011-06-07
- Inventor: Tsutomu Chou , Tomohito Mizuno
- Applicant: Tsutomu Chou , Tomohito Mizuno
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H04R31/00
Abstract:
An MR element includes a free layer having a direction of magnetization that changes in response to an external magnetic field, a pinned layer having a fixed direction of magnetization, and a spacer layer disposed between these layers. The spacer layer includes a first region, a second region and a third region that are each in the form of a layer and that are arranged in a direction intersecting the plane of each of the foregoing layers. The second region is sandwiched between the first region and the third region. The first region and the third region are each composed of an oxide semiconductor, and the second region includes at least a nonmagnetic conductor phase.
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