Invention Grant
US07957106B2 Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element
有权
用于形成磁阻（MR）读取元件的自由层或固定层的化学无序材料
- Patent Title: Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element
- Patent Title (中): 用于形成磁阻（MR）读取元件的自由层或固定层的化学无序材料
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Application No.: US11742313Application Date: 2007-04-30
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Publication No.: US07957106B2Publication Date: 2011-06-07
- Inventor: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Duft Bornsen & Fishman, LLP
- Main IPC: G11B5/127
- IPC: G11B5/127 ; G11B5/33
Abstract:
Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.
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