Invention Grant
US07956947B2 Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same 有权
具有改进的电气特性的薄膜晶体管阵列基板及其制造方法

Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same
Abstract:
A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
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