Invention Grant
- Patent Title: Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same
- Patent Title (中): 具有改进的电气特性的薄膜晶体管阵列基板及其制造方法
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Application No.: US12355646Application Date: 2009-01-16
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Publication No.: US07956947B2Publication Date: 2011-06-07
- Inventor: Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
- Applicant: Je-Hun Lee , Kap-Soo Yoon , Kyung-Seok Son , Do-Hyun Kim , Chang-Oh Jeong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2008-0005833 20080118
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/13 ; H01L29/786 ; H01L21/336

Abstract:
A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.
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