Invention Grant
US07956608B1 Method of using group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes
有权
使用III-V族铁磁/非磁性半导体异质结和磁二极管的方法
- Patent Title: Method of using group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes
- Patent Title (中): 使用III-V族铁磁/非磁性半导体异质结和磁二极管的方法
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Application No.: US11476253Application Date: 2006-06-27
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Publication No.: US07956608B1Publication Date: 2011-06-07
- Inventor: Bruce W. Wessels , Steven J. May
- Applicant: Bruce W. Wessels , Steven J. May
- Applicant Address: US IL Evanston
- Assignee: Northwestern University
- Current Assignee: Northwestern University
- Current Assignee Address: US IL Evanston
- Agency: Reinhart Boerner Van Deuren s.c.
- Main IPC: G01R33/02
- IPC: G01R33/02
Abstract:
Methods of use of ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.
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