Invention Grant
- Patent Title: Semiconductor storage element and manufacturing method thereof
- Patent Title (中): 半导体存储元件及其制造方法
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Application No.: US12404648Application Date: 2009-03-16
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Publication No.: US07956405B2Publication Date: 2011-06-07
- Inventor: Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
- Applicant: Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPP2008-252411 20080930
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.
Public/Granted literature
- US20100078704A1 SEMICONDUCTOR STORAGE ELEMENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-04-01
Information query
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