Invention Grant
US07956397B2 Semiconductor device, charge pumping circuit, and semiconductor memory circuit
失效
半导体器件，电荷泵浦电路和半导体存储器电路
- Patent Title: Semiconductor device, charge pumping circuit, and semiconductor memory circuit
- Patent Title (中): 半导体器件，电荷泵浦电路和半导体存储器电路
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Application No.: US11863849Application Date: 2007-09-28
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Publication No.: US07956397B2Publication Date: 2011-06-07
- Inventor: Osamu Wada , Toshimasa Namekawa
- Applicant: Osamu Wada , Toshimasa Namekawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-268276 20060929
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L29/94 ; G05F1/10
Abstract:
A semiconductor device comprising: a first well region which is formed at a surface portion of a semiconductor substrate and to which a first voltage is applied; a gate insulating film which is formed on the first well region; a gate electrode which is formed on the gate insulating film and has a polarity different from a polarity of the first well region and to which a second voltage is applied; and an element isolating region which is formed at a surface portion of the first well region to surround a region within the first well region that is opposed to the gate insulating film, wherein a capacitance is formed between the region within the first well region surrounded by the element isolating region and the gate electrode.
Public/Granted literature
- US20080237673A1 SEMICONDUCTOR DEVICE, CHARGE PUMPING CIRCUIT, AND SEMICONDUCTOR MEMORY CIRCUIT Public/Granted day:2008-10-02
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