Invention Grant
US07956360B2 Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
有权
通过氢化物气相外延生长平面缩小位错密度M面氮化镓
- Patent Title: Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
- Patent Title (中): 通过氢化物气相外延生长平面缩小位错密度M面氮化镓
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Application No.: US11697457Application Date: 2007-04-06
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Publication No.: US07956360B2Publication Date: 2011-06-07
- Inventor: Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
- Applicant: Benjamin A. Haskell , Melvin B. McLaurin , Steven P. DenBaars , James Stephen Speck , Shuji Nakamura
- Applicant Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/036
Abstract:
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
Public/Granted literature
- US20070184637A1 GROWTH OF PLANAR REDUCED DISLOCATION DENSITY M-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY Public/Granted day:2007-08-09
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