Invention Grant
- Patent Title: Producing method of a semiconductor device using CVD processing
- Patent Title (中): 使用CVD处理的半导体器件的制造方法
-
Application No.: US10572396Application Date: 2004-09-17
-
Publication No.: US07955991B2Publication Date: 2011-06-07
- Inventor: Kenichi Suzaki , Jie Wang
- Applicant: Kenichi Suzaki , Jie Wang
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokussai Electric Inc.
- Current Assignee: Hitachi Kokussai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2003-327358 20030919
- International Application: PCT/JP2004/013678 WO 20040917
- International Announcement: WO2005/029566 WO 20050331
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/00
Abstract:
Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.
Public/Granted literature
- US20070259532A1 Producing Method of Semiconductor Device and Substrate Processing Apparatus Public/Granted day:2007-11-08
Information query
IPC分类:
