Methods of forming semiconductor structures

Invention Grant

US07955976B2 Methods of forming semiconductor structures 有权

Title translation: 形成半导体结构的方法

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Patent Title: Methods of forming semiconductor structures
Patent Title (中): 形成半导体结构的方法
Application No.: US12632595

Application Date: 2009-12-07
Publication No.: US07955976B2

Publication Date: 2011-06-07
Inventor: Zhiping Yin , Mark Jost
Applicant: Zhiping Yin , Mark Jost
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Agency: TraskBritt
Main IPC: H01L21/44
IPC: H01L21/44

Abstract:

The present invention relates to methods of forming semiconductor structures. The methods may include disposing electrically conductive material within an opening in a first dielectric material, passivating an upper surface of the electrically conductive material and introducing materials to form an interlayer dielectric upon the passivated upper surface. The present invention also includes methods of passivating surfaces of a semiconductor structure with a nitrogen-containing species.

Abstract(Chinese):

本发明涉及形成半导体结构的方法。所述方法可以包括将导电材料设置在第一介电材料的开口内，钝化导电材料的上表面并引入材料以在钝化的上表面上形成层间电介质。本发明还包括用含氮物质钝化半导体结构表面的方法。

Public/Granted literature

US20100087060A1 METHODS OF FORMING SEMICONDUCTOR STRUCTURES Public/Granted day:2010-04-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的