Invention Grant
US07955957B2 Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device
有权
III族氮化物半导体薄膜，其制造方法和III族氮化物半导体发光器件
- Patent Title: Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device
- Patent Title (中): III族氮化物半导体薄膜，其制造方法和III族氮化物半导体发光器件
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Application No.: US12612206Application Date: 2009-11-04
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Publication No.: US07955957B2Publication Date: 2011-06-07
- Inventor: Rak Jun Choi , Sakai Shiro , Naoi Yoshiki
- Applicant: Rak Jun Choi , Sakai Shiro , Naoi Yoshiki
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-250185 20050830
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/28 ; H01L21/3205
Abstract:
Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.
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