Invention Grant
US07955954B2 Method of making semiconductor devices employing first and second carriers
有权
制造采用第一和第二载体的半导体器件的方法
- Patent Title: Method of making semiconductor devices employing first and second carriers
- Patent Title (中): 制造采用第一和第二载体的半导体器件的方法
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Application No.: US12102175Application Date: 2008-04-14
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Publication No.: US07955954B2Publication Date: 2011-06-07
- Inventor: Stefan Landau , Joachim Mahler , Thomas Wowra
- Applicant: Stefan Landau , Joachim Mahler , Thomas Wowra
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/301
- IPC: H01L21/301
Abstract:
A semiconductor device and method. One embodiment provides an integral array of first carriers and an integral array of second carries connected to the integral array of first carriers. First semiconductor chips are arranged on the integral array of first carriers. The integral array of second carriers is arranged over the first semiconductor chips.
Public/Granted literature
- US20090256247A1 SEMICONDUCTOR DEVICE AND METHOD INCLUDING FIRST AND SECOND CARRIERS Public/Granted day:2009-10-15
Information query
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