Invention Grant
- Patent Title: Manufacturing method of SOI substrate
- Patent Title (中): SOI衬底的制造方法
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Application No.: US12829409Application Date: 2010-07-02
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Publication No.: US07955949B2Publication Date: 2011-06-07
- Inventor: Hideto Ohnuma , Yoichi Iikubo , Takayoshi Sato
- Applicant: Hideto Ohnuma , Yoichi Iikubo , Takayoshi Sato
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-112432 20070420
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
There is provided a method of manufacturing an SOI substrate which is practicable even when a supporting substrate having a low allowable temperature limit is used. A separation layer is formed in a region at a certain depth from a surface of a semiconductor substrate, and a first heat treatment is conducted when a semiconductor layer on the separation layer is bonded to the supporting substrate and separated. A second heat treatment is conducted to the supporting substrate to which the semiconductor layer is bonded. The second heat treatment is conducted at a temperature which is equal to or higher than the temperature of the first heat treatment and does not exceed a strain point of the supporting substrate. When the first heat treatment and the second heat treatment are conducted at the same temperature, a treatment time of the second heat treatment may be set to be longer.
Public/Granted literature
- US20100270639A1 MANUFACTURING METHOD OF SOI SUBSTRATE Public/Granted day:2010-10-28
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