Invention Grant
- Patent Title: Organic field effect transistor and method of manufacturing the same
- Patent Title (中): 有机场效应晶体管及其制造方法
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Application No.: US12462101Application Date: 2009-07-29
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Publication No.: US07955915B2Publication Date: 2011-06-07
- Inventor: Chien-Cheng Liu , Hsin-Fei Meng , Sheng-Fu Horng
- Applicant: Chien-Cheng Liu , Hsin-Fei Meng , Sheng-Fu Horng
- Applicant Address: TW Hsin-chu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsin-chu
- Agency: Hudak, Shunk & Farine Co. LPA
- Priority: TW97128935A 20080731
- Main IPC: H01L21/84
- IPC: H01L21/84
Abstract:
The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.
Public/Granted literature
- US20100025667A1 Organic field effect transistor and method of manufacturing the same Public/Granted day:2010-02-04
Information query
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