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US07955896B2 Method of manufacturing stacked semiconductor device 失效
层叠半导体器件的制造方法

Method of manufacturing stacked semiconductor device
Abstract:
A first semiconductor element is mounted on a wiring board. A second semiconductor element having a portion projecting to an outer side of an outer periphery of the first semiconductor element is disposed on the first semiconductor element via an adhesive. The adhesive has a viscosity (μ0.5 rpm) at a low-rotation speed in a range from 10 Pa·s to 150 Pa·s and a thixotropic ratio of 2 or higher expressed by a ratio (μ0.5 rpm/μ5 rpm) of the viscosity (μ0.5 rpm) at the low-rotation speed to a viscosity (μ5 rpm) at a high-rotation speed. The second semiconductor element is bonded onto the first semiconductor element while the adhesive is filled in a hollow portion between the projecting portion of the second semiconductor element and the wiring board.
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