Invention Grant
US07955876B2 Method for simulating deposition film shape and method for manufacturing electronic device
有权
用于模拟沉积膜形状的方法和用于制造电子器件的方法
- Patent Title: Method for simulating deposition film shape and method for manufacturing electronic device
- Patent Title (中): 用于模拟沉积膜形状的方法和用于制造电子器件的方法
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Application No.: US11859152Application Date: 2007-09-21
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Publication No.: US07955876B2Publication Date: 2011-06-07
- Inventor: Shigeru Kinoshita
- Applicant: Shigeru Kinoshita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2007-056281 20070306
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
A deposition film shape simulation method for calculating a thickness of a thin-film formed by supplying deposition species on a substrate surface, includes: changing a parameter to be used in the calculation depending on the thickness of the deposited thin-film.
Public/Granted literature
- US20080220546A1 METHOD FOR SIMULATING DEPOSITION FILM SHAPE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE Public/Granted day:2008-09-11
Information query
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