Invention Grant
- Patent Title: Method of fabricating a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12415757Application Date: 2009-03-31
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Publication No.: US07955873B2Publication Date: 2011-06-07
- Inventor: Manfred Mengel , Thomas Spoettl , Frank Pueschner
- Applicant: Manfred Mengel , Thomas Spoettl , Frank Pueschner
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of fabricating a semiconductor device is disclosed. In one embodiment, the method includes providing at least one semiconductor chip including an electrically conductive layer. A voltage is applied to an electrode. The electrode is moved over the electrically conductive layer for growing a metal layer onto the electrically conductive layer.
Public/Granted literature
- US20100248475A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2010-09-30
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