Invention Grant
US07955872B2 Manufacturing method of semiconductor integrated circuit device using magnetic memory
有权
使用磁记忆体的半导体集成电路器件的制造方法
- Patent Title: Manufacturing method of semiconductor integrated circuit device using magnetic memory
- Patent Title (中): 使用磁记忆体的半导体集成电路器件的制造方法
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Application No.: US12686954Application Date: 2010-01-13
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Publication No.: US07955872B2Publication Date: 2011-06-07
- Inventor: Nozomu Matsuzaki
- Applicant: Nozomu Matsuzaki
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- Priority: JP2009-008855 20090119
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/20 ; H01L21/8234 ; H01L21/8244
Abstract:
In the case where a laminated structure formed by laminating tunneling magnetoresistive films are processed by ion milling or the like, scattered substances of a material constituting the tunneling magnetoresistive film are deposited onto side walls of the laminated structure, or contaminate the inside of a device for processing. Accordingly, it has been difficult to manufacture a magnetic memory or a semiconductor device on which the magnetic memory is mounted, with stable characteristics.Side wall spacers are formed on side walls of a conductive layer arranged above a tunneling magnetoresistive film, and scattered substances of a material constituting the tunneling magnetoresistive film during processing are deposited. Thereafter, by removing the side wall spacers, the redepositions of the material are also removed. The side wall spacers used are of one kind or two kinds.
Public/Granted literature
- US20100184239A1 MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING MAGNETIC MEMORY Public/Granted day:2010-07-22
Information query
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