Invention Grant
- Patent Title: Silica glass crucible
- Patent Title (中): 二氧化硅玻璃坩埚
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Application No.: US12717390Application Date: 2010-03-04
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Publication No.: US07955511B2Publication Date: 2011-06-07
- Inventor: Yoshiyuki Tsuji , Toshio Tsujimoto
- Applicant: Yoshiyuki Tsuji , Toshio Tsujimoto
- Applicant Address: JP Tokyo
- Assignee: Japan Super Quartz Corporation
- Current Assignee: Japan Super Quartz Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-092146 20030328
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C04B35/00 ; F16L9/10 ; F27B14/10

Abstract:
A silica glass crucible used for pulling up silicon single crystal at a high temperature. The silica glass crucible may have at least an outer surface of a wall part of the crucible covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. The fine groves may be formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and may exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500° C. is more than 0.6.
Public/Granted literature
- US20100154703A1 SILICA GLASS CRUCIBLE Public/Granted day:2010-06-24
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