Invention Grant
US07955448B2 Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy
有权
用于半导体器件和半导体模块的散热的合金以及合金的制造方法
- Patent Title: Alloy for heat dissipation of semiconductor device and semiconductor module, and method of manufacturing alloy
- Patent Title (中): 用于半导体器件和半导体模块的散热的合金以及合金的制造方法
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Application No.: US11886973Application Date: 2005-10-05
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Publication No.: US07955448B2Publication Date: 2011-06-07
- Inventor: Hoshiaki Terao , Hideaki Kobiki , Satoshi Uenosono
- Applicant: Hoshiaki Terao , Hideaki Kobiki , Satoshi Uenosono
- Applicant Address: JP Niigata-shi, Niigata JP Tokyo
- Assignee: JFE Precision Corporation,JFE Steel Corporation
- Current Assignee: JFE Precision Corporation,JFE Steel Corporation
- Current Assignee Address: JP Niigata-shi, Niigata JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2005-119104 20050415
- International Application: PCT/JP2005/018741 WO 20051005
- International Announcement: WO2006/112063 WO 20061026
- Main IPC: C22C27/06
- IPC: C22C27/06 ; C22C30/02

Abstract:
It is an object to provide an inexpensive alloy for heat dissipation having a small thermal expansion coefficient as known composite materials, a large thermal conductivity as pure copper, and excellent machinability and a method for manufacturing the alloy. In particular, since various shapes are required of the alloy for heat dissipation, a manufacturing method by using a powder metallurgy method capable of supplying alloys for heat dissipation, the manufacturing costs of which are low and which take on various shapes, is provided besides the known melting method. The alloy according to the present invention is a Cu—Cr alloy, which is composed of 0.3 percent by mass or more, and 80 percent by mass or less of Cr and the remainder of Cu and incidental impurities and which has a structure in which particulate Cr phases having a major axis of 100 nm or less and an aspect ratio of less than 10 are precipitated at a density of 20 particles/μm2 in a Cu matrix except Cr phases of more than 100 nm.
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