Invention Grant
- Patent Title: Diode pumping of a laser gain medium
- Patent Title (中): 二极管泵浦激光增益介质
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Application No.: US11411901Application Date: 2006-04-27
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Publication No.: US07949022B2Publication Date: 2011-05-24
- Inventor: Edward J. Miesak , Paul E. Jackson , Pei-Luen Li
- Applicant: Edward J. Miesak , Paul E. Jackson , Pei-Luen Li
- Applicant Address: US MD Bethesda
- Assignee: Lockheed Martin Corporation
- Current Assignee: Lockheed Martin Corporation
- Current Assignee Address: US MD Bethesda
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01S3/04
- IPC: H01S3/04

Abstract:
An integrated, low profile, high power laser light emission device is disclosed. The integrated laser light emission device provides uniform heat dissipation, as well as uniform pumping of the laser gain medium without the need for a pumping cavity. The laser system includes a pump diode array that can be mounted directly to a laser gain medium without intervening correcting optics hardware. Heat generated by the laser light emission device is cooled by a single cooling system. In the laser device, a pump diode array is preferably a Vertical-Cavity Surface-Emitting Laser (VCSEL) array. VCSEL arrays are mounted on the laser gain crystal by a metal cavity frame or metal stilts. The slightly elevated mounting of the VCSEL's enables increased cooling and maximizing the quantity of VCSEL's on the laser gain medium in order to achieve highly efficient and high power laser light output.
Public/Granted literature
- US20070253458A1 Diode pumping of a laser gain medium Public/Granted day:2007-11-01
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