Invention Grant
- Patent Title: Inductor formed on semiconductor substrate
- Patent Title (中): 在半导体衬底上形成的电感器
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Application No.: US11468789Application Date: 2006-08-31
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Publication No.: US07948055B2Publication Date: 2011-05-24
- Inventor: Tsun-Lai Hsu , Jun-Hong Ou , Jui-Fang Chen , Ji-Wei Hsu
- Applicant: Tsun-Lai Hsu , Jun-Hong Ou , Jui-Fang Chen , Ji-Wei Hsu
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L27/00
- IPC: H01L27/00
Abstract:
An inductor formed on a semiconductor substrate is provided in the present invention. The inductor comprises a metal layer and an insulator layer. The metal layer constitutes the coil of the inductor. The insulator layer comprises at least one insulator slot, and each insulator slot is encompassed in the metal layer.
Public/Granted literature
- US20080122028A1 INDUCTOR FORMED ON A SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING THE SAME Public/Granted day:2008-05-29
Information query
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