Invention Grant
US07947589B2 FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layer
有权
由结晶硅层形成的具有热氧化物间隔物硬掩模的FinFET形成
- Patent Title: FinFET formation with a thermal oxide spacer hard mask formed from crystalline silicon layer
- Patent Title (中): 由结晶硅层形成的具有热氧化物间隔物硬掩模的FinFET形成
-
Application No.: US12552774Application Date: 2009-09-02
-
Publication No.: US07947589B2Publication Date: 2011-05-24
- Inventor: Ramachandran Muralidhar , Marwan H. Khater
- Applicant: Ramachandran Muralidhar , Marwan H. Khater
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Hamilton & Terrile, LLP
- Agent Michael Rocco Cannatti
- Main IPC: H01L21/3205
- IPC: H01L21/3205
Abstract:
A semiconductor process and apparatus provide a FinFET device by forming a second single crystal semiconductor layer (19) that is isolated from an underlying first single crystal semiconductor layer (17) by a buried insulator layer (18); patterning and etching the second single crystal semiconductor layer (19) to form a single crystal mandrel (42) having vertical sidewalls; thermally oxidizing the vertical sidewalls of the single crystal mandrel to grow oxide spacers (52) having a substantially uniform thickness; selectively removing any remaining portion of the single crystal mandrel (42) while substantially retaining the oxide spacers (52); and selectively etching the first single crystal semiconductor layer (17) using the oxide spacers (52) to form one or more FinFET channel regions (92).
Public/Granted literature
- US20110053361A1 FinFET Formation with a Thermal Oxide Spacer Hard Mask Formed from Crystalline Silicon Layer Public/Granted day:2011-03-03
Information query
IPC分类:
