Invention Grant
- Patent Title: Forming method of porous low-k layer and interconnect process
- Patent Title (中): 多孔低k层和互连工艺的形成方法
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Application No.: US11672307Application Date: 2007-02-07
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Publication No.: US07947565B2Publication Date: 2011-05-24
- Inventor: Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- Applicant: Mei-Ling Chen , Kuo-Chih Lai , Su-Jen Sung , Chien-Chung Huang , Yu-Tsung Lai
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/443
- IPC: H01L21/443 ; H01L33/16
Abstract:
A method of forming a porous low-k layer is described. A CVD process is conducted to a substrate, wherein a framework precursor and a porogen precursor are supplied. In an end period of the supply of the framework precursor, the value of at least one deposition parameter negatively correlated with the density of the product of the CVD process is decreased.
Public/Granted literature
- US20080188088A1 FORMING METHOD AND STRUCTURE OF POROUS LOW-K LAYER, INTERCONNECT PROCESS AND INTERCONNECT STRUCTURE Public/Granted day:2008-08-07
Information query
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