Invention Grant
- Patent Title: Method of nickel disilicide formation and method of nickel disilicate source/drain formation
- Patent Title (中): 二硅化镍形成方法和二硅酸镍源/漏层形成方法
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Application No.: US11708614Application Date: 2007-02-21
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Publication No.: US07947560B2Publication Date: 2011-05-24
- Inventor: Yukimune Watanabe , Nobuyuki Mise , Shinji Migita
- Applicant: Yukimune Watanabe , Nobuyuki Mise , Shinji Migita
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Seiko Epson Corporation,Renesas Technology Corporation
- Current Assignee: Seiko Epson Corporation,Renesas Technology Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2006-050416 20060227
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/44 ; H01L21/3205 ; H01L21/00
Abstract:
A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.
Public/Granted literature
- US20070202692A1 Method for forming silicide and method for fabricating semiconductor device Public/Granted day:2007-08-30
Information query
IPC分类:
