Invention Grant
- Patent Title: Surface emitting laser
- Patent Title (中): 表面发射激光
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Application No.: US12377934Application Date: 2008-10-08
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Publication No.: US07940826B2Publication Date: 2011-05-10
- Inventor: Mitsuhiro Ikuta
- Applicant: Mitsuhiro Ikuta
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-266246 20071012
- International Application: PCT/JP2008/068691 WO 20081008
- International Announcement: WO2009/048159 WO 20090416
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
When configuring a surface emitting laser by a semiconductor material not capable of largely extracting a refractive-index difference, the surface emitting laser using a photonic crystal capable of forming a waveguide is provided.
Public/Granted literature
- US20100166034A1 SURFACE EMITTING LASER Public/Granted day:2010-07-01
Information query
