Invention Grant
- Patent Title: Semiconductor memory device and parallel test method of the same
- Patent Title (中): 半导体存储器件和并行测试方法相同
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Application No.: US12134780Application Date: 2008-06-06
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Publication No.: US07940597B2Publication Date: 2011-05-10
- Inventor: Bo-Yeun Kim
- Applicant: Bo-Yeun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0019681 20080303
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
Semiconductor memory device and parallel test method of the same. The test includes writing data into multiple memory banks simultaneously, reading the data from a portion of the memory banks, compressing the read data and outputting the compressed data to the outside of a chip.
Public/Granted literature
- US20090219774A1 SEMICONDUCTOR MEMORY DEVICE AND PARALLEL TEST METHOD OF THE SAME Public/Granted day:2009-09-03
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