Invention Grant
US07940591B2 Methods and apparatuses for controlling fully-buffered dual inline memory modules
有权
用于控制全缓冲双列直插式存储器模块的方法和装置
- Patent Title: Methods and apparatuses for controlling fully-buffered dual inline memory modules
- Patent Title (中): 用于控制全缓冲双列直插式存储器模块的方法和装置
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Application No.: US12203824Application Date: 2008-09-03
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Publication No.: US07940591B2Publication Date: 2011-05-10
- Inventor: Paul Michael Mitchell, Jr.
- Applicant: Paul Michael Mitchell, Jr.
- Agency: Polsinelli Shughart PC
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
Methods and apparatuses are presented for controlling a fully buffered dual inline memory module. In one embodiment, the memory module may include at least two memory chips, a buffer coupled to the at least two memory chips (the buffer serially receiving data to be stored in the at least two memory chips), and a heat sink thermally coupled to the at least two memory chips and thermally coupled to the buffer such that heat generated by the buffer is coupled to a first memory chip within the at least two memory chips. The may be configured such that it operates at a higher temperature than the first memory chip and the refresh rate of the first memory chip may be adjusted when the temperature of the first memory chip is outside of a predetermined range.
Public/Granted literature
- US20100054067A1 METHODS AND APPARATUSES FOR CONTROLLING FULLY-BUFFERED DUAL INLINE MEMORY MODULES Public/Granted day:2010-03-04
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