Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
-
Application No.: US12262269Application Date: 2008-10-31
-
Publication No.: US07940586B2Publication Date: 2011-05-10
- Inventor: Sung-Joo Ha
- Applicant: Sung-Joo Ha
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0111615 20071102
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A semiconductor memory device includes a global I/O line (GIO) for transmitting read data and write data between a peripheral region and a core region when a read/write operation is activated, and a test circuit for transmitting/receiving test data through the global I/O line to test the semiconductor memory device, when a test operation is activated.
Public/Granted literature
- US20090116300A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2009-05-07
Information query