Invention Grant
US07940566B2 Flash memory device adapted to prevent read failures due to dummy strings
有权
适用于防止由虚拟字符串引起的读取故障的闪存设备
- Patent Title: Flash memory device adapted to prevent read failures due to dummy strings
- Patent Title (中): 适用于防止由虚拟字符串引起的读取故障的闪存设备
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Application No.: US12495971Application Date: 2009-07-01
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Publication No.: US07940566B2Publication Date: 2011-05-10
- Inventor: Pan-Suk Kwak , Hong-Soo Kim
- Applicant: Pan-Suk Kwak , Hong-Soo Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0045275 20060519
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
In a NAND flash memory device, a dummy NAND string is arranged between a plurality of normal NAND strings. A dummy bit line connected to the dummy NAND string is formed and/or controlled such that when program voltages are applied to the normal NAND strings, memory cells within the dummy NAND string are not programmed.
Public/Granted literature
- US20090262580A1 FLASH MEMORY DEVICE ADAPTED TO PREVENT READ FAILURES DUE TO DUMMY STRINGS Public/Granted day:2009-10-22
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