Invention Grant
US07940555B2 Row decoder for non-volatile memory devices, in particular of the phase-change type
有权
行解码器用于非易失性存储器件,特别是相变型
- Patent Title: Row decoder for non-volatile memory devices, in particular of the phase-change type
- Patent Title (中): 行解码器用于非易失性存储器件,特别是相变型
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Application No.: US12548246Application Date: 2009-08-26
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Publication No.: US07940555B2Publication Date: 2011-05-10
- Inventor: Guido De Sandre
- Applicant: Guido De Sandre
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Agent Lisa K. Jorgenson; Robert Iannucci
- Priority: ITTO2008A0645 20080829
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C8/00

Abstract:
A hierarchical row decoder is for a phase-change memory device provided with an array of memory cells organized according to a plurality of array wordlines and array bitlines. The row decoder has a global decoder that addresses first and a second global wordlines according to first address signals; and a local decoder, which is operatively coupled to the global decoder and addresses a respective array wordline according to the value the first and second global wordline and second address signals. The local decoder has a first circuit branch providing, when the first global wordline is addressed, a first current path between the array wordline and a first biasing source during a reading operation; and a second circuit branch providing, when the second global wordline is addressed, a second current path, distinct from the first current path, between the array wordline and a second biasing source during a programming operation.
Public/Granted literature
- US20100054032A1 ROW DECODER FOR NON-VOLATILE MEMORY DEVICES, IN PARTICULAR OF THE PHASE-CHANGE TYPE Public/Granted day:2010-03-04
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