Invention Grant
- Patent Title: Bit cell designs for ternary content addressable memory
- Patent Title (中): 位单元设计用于三元内容可寻址存储器
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Application No.: US12124152Application Date: 2008-05-21
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Publication No.: US07940541B2Publication Date: 2011-05-10
- Inventor: Shahid Ali , Sharad Gupta , Sunil Kumar Misra
- Applicant: Shahid Ali , Sharad Gupta , Sunil Kumar Misra
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Dawn V. Stephens; Wade James Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G11C15/00
- IPC: G11C15/00

Abstract:
A scheme for bit cell designs for ternary content addressable memory for comparing search data with content data is disclosed. In one embodiment, a system for comparing search data with content data stored in a ternary content addressable memory (TCAM) unit, includes a first static logic gate for comparing a first content data with a first search data, and a second static logic gate coupled to the first static logic gate for comparing a second content data with a second search data. The content data comprises the first content data and the second content data and the search data comprises the first search data and the second search data. The first static logic gate forwards a signal for disabling the second static logic gate if the first content data does not match with the first search data.
Public/Granted literature
- US20090290400A1 BIT CELL DESIGNS FOR TERNARY CONTENT ADDRESSABLE MEMORY Public/Granted day:2009-11-26
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